Intel Corporation recently announced a significant breakthrough in the evolution of the transistor, the microscopic building block of modern electronics. For the first time since the invention of silicon transistors over 50 years ago, transistors using a three-dimensional structure will be put into high-volume manufacturing. Intel will introduce a revolutionary 3-D transistor design called Tri-Gate, first disclosed by Intel in 2002, into high-volume manufacturing at the 22-nanometer (nm) node in an Intel chip codenamed "Ivy Bridge." A nanometer is one-billionth of a meter.
The three-dimensional Tri-Gate transistors represent a fundamental departure from the two-dimensional planar transistor structure that has powered not only all computers, mobile phones and consumer electronics to-date, but also the electronic controls within cars, spacecraft, household appliances, medical devices and virtually thousands of other everyday devices for decades.
Scientists have long recognized the benefits of a 3-D structure for sustaining the pace of Moore’s Law as device dimensions become so small that physical laws become barriers to advancement. The key to today’s breakthrough is Intel’s ability to deploy its novel 3-D Tri-Gate transistor design into high-volume manufacturing, ushering in the next era of Moore’s Law and opening the door to a new generation of innovations across a broad spectrum of devices.
The three-dimensional Tri-Gate transistors represent a fundamental departure from the two-dimensional planar transistor structure that has powered not only all computers, mobile phones and consumer electronics to-date, but also the electronic controls within cars, spacecraft, household appliances, medical devices and virtually thousands of other everyday devices for decades.
Scientists have long recognized the benefits of a 3-D structure for sustaining the pace of Moore’s Law as device dimensions become so small that physical laws become barriers to advancement. The key to today’s breakthrough is Intel’s ability to deploy its novel 3-D Tri-Gate transistor design into high-volume manufacturing, ushering in the next era of Moore’s Law and opening the door to a new generation of innovations across a broad spectrum of devices.